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1 CMPA5585025F 25 w, 5.5 - 8.5 ghz, gan mmic, power amplifer crees CMPA5585025F is a gallium nitride (gan) high electron mobility transistor (hemt) based monolithic microwave integrated circuit (mmic). gan has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. gan hemts also offer greater power density and wider bandwidths compared to si and gaas transistors. this mmic is available in a 10 lead metal/ceramic fanged package for optimal electrical and thermal performance. re v 4.1 C ju ly 2015 typical performance over 5.8-8.4 ghz (t c = 25?c) parameter 5.8 ghz 6.4 ghz 7.2 ghz 7.9 ghz 8.4 ghz units small signal gain 29.5 24.0 24.0 24.0 22.0 db output power 1 15 23 20 19 19 w power gain 1 21.7 19.5 17.2 18.5 18.6 db power added effciency 1 30 25 20.5 19 19.5 % note 1 : measured at -30 dbc, 1.6 mhz from carrier, in the CMPA5585025F-amp under oqpsk modulation, 1.6 msps, pn23, alpha filter = 0.2. features ? 25 db small signal gain ? 35 w typical p sat ? operation up to 28 v ? high breakdown voltage ? high temperature operation ? size 1.00 x 0.385 inches applications ? point to point radio ? communications ? satellite communication uplink pn: CMPA5585025F package type: 440208 subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) parameter symbol rating units conditions drain-source voltage v dss 84 v dc 25?c gate-source voltage v gs -10, +2 v dc 25?c power dissipation p diss 55 w storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 10 ma 25?c soldering temperature 1 t s 245 ?c screw torque 40 in-oz thermal resistance, junction to case r jc 1.55 ?c/w oqpsk, 85?c, p diss = 55 w thermal resistance, junction to case r jc 1.80 ?c/w cw, 85?c, p diss = 77 w case operating temperature t c -40, +140 ?c p diss = 55 w case operating temperature t c -40, +85 ?c p diss = 77 w note: 1 refer to the application note on soldering at www.cree.com/rf/document-library electrical characteristics (frequency = 5.5 ghz to 8.5 ghz unless otherwise stated; t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics 1 gate threshold voltage v gs(th) -3.8 -3.0 -2.3 v v ds = 10 v, i d = 13.2 ma gate quiescent voltage v gs(q) C -2.7 C v dc v ds = 28 v, i d = 285 ma saturated drain current 2 i ds 10.6 12.8 C a v ds = 6.0 v, v gs = 2.0 v drain-source breakdown voltage v bd 84 100 C v v gs = -8 v, i d = 13.2 ma rf characteristics 3 small signal gain s21 18.25 24 C db v dd = 28 v, i dq = 285 ma, p in = -20 dbm input return loss s11 C 10 C db v dd = 28 v, i dq = 285 ma output return loss s22 C 6 C db v dd = 28 v, i dq = 285 ma output mismatch stress vswr C C 5:1 y no damage at all phase angles, v dd = 28 v, i dq = 285 ma, p out = 25w oqpsk notes: 1 measured on-wafer prior to packaging. 2 scaled from pcm data. 3 measured in the CMPA5585025F-amp CMPA5585025F rev 4.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
3 electrical characteristics continued... (t c = 25?c) characteristics symbol min. typ. max. units conditions rf characteristics 1,2,3,4 power added effciency pae1 24.5 30.0 C % v dd = 28 v, i dq = 285 ma, frequency = 5.8 ghz power added effciency pae2 16.5 20.5 C % v dd = 28 v, i dq = 285 ma, frequency = 7.2 ghz power added effciency pae3 15.5 19.0 C % v dd = 28 v, i dq = 285 ma, frequency = 7.9 ghz power added effciency pae4 15.0 19.5 C % v dd = 28 v, i dq = 285 ma, frequency = 8.4 ghz power gain g p1 19.5 21.7 C db v dd = 28 v, i dq = 285 ma, frequency = 5.8 ghz power gain g p2 16.25 17.2 C db v dd = 28 v, i dq = 285 ma, frequency = 7.2 ghz power gain g p3 16.55 18.5 C db v dd = 28 v, i dq = 285 ma, frequency = 7.9 ghz power gain g p4 16.75 18.6 C db v dd = 28 v, i dq = 285 ma, frequency = 8.4 ghz oqpsk linearity aclr1 C -36 C27.0 db v dd = 28 v, i dq = 285 ma, frequency = 5.8 ghz oqpsk linearity aclr2 C -36 C28.5 db v dd = 28 v, i dq = 285 ma, frequency = 7.2 ghz oqpsk linearity aclr3 C -36 C26.0 db v dd = 28 v, i dq = 285 ma, frequency = 7.9 ghz oqpsk linearity aclr4 C -42 C32.5 db v dd = 28 v, i dq = 285 ma, frequency = 8.4 ghz notes: 1 measured in the CMPA5585025F-amp 2 under oqpsk modulated signal, 1.6 msps, pn23, alpha filter = 0.2. 3 measured at p ave = 40 dbm. 4 fixture loss de-embedded. electrostatic discharge (esd) classifcations parameter symbol class test methodology human body model hbm 1a (> 250 v) jedec jesd22 a114-d charge device model cdm ii (200 < 500 v) jedec jesd22 c101-c CMPA5585025F rev 4.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
4 typical performance of the CMPA5585025F figure 1. CMPA5585025F linear output power, gain and pae at -30 dbc, 1.6 mhz from carrier v dd = 28 v, i dq = 285 ma, 1.6 msps oqpsk modulation figure 2. typical small signal gain and return loss vs frequency of the CMPA5585025F measured in CMPA5585025F-amp amplifer circuit. v ds = 28 v, i ds = 285 ma -40 -30 -20 -10 0 10 20 30 40 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 s m a l l s i g n a l g a i n , i n p u t a n d o u t p u t r e t u r n l o s s ( d b ) frequency (ghz) typical small signal gain and return loss vs frequency of the CMPA5585025F measured in CMPA5585025F-tb amplifier circuit. vds = 28 v, ids = 285 ma |s21| (db) |s11| (db) |s22| (db) 20 25 30 35 40 o u tp u t po w e r (w ), g a i n (d b ), & p a e (% ) CMPA5585025F output power, gain and pae at -30 dbc - 1.6 mhz from carrier vdd = 28 v, idq = 285 ma, 1.6 msps oqpsk modulation 0 5 10 15 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5 7.7 7.9 8.1 8.3 8.5 o u tp u t po w e r (w ), g a i n (d b ), & p a e (% ) frequency (ghz) output power gain pae c band extended c band x band CMPA5585025F rev 4.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
5 typical performance of the CMPA5585025F figure 3. CMPA5585025F c-band spectral mask at 15 w pae = 29.1% at 5.8 ghz, 28.5% at 6.4 ghz & 25.6% at 7.2 ghz figure 4. CMPA5585025F x-band spectral mask at 15 w pae = 25.6% at 7.9 ghz & 25.3% at 8.4 ghz 0 10 20 30 40 50 m ag n i t u d e ( d b ) CMPA5585025F c-band spectral mask at 15 w pae = 29.1 % @ 5.8 ghz, 28.5 % @ 6.4 ghz & 25.6 % @ 7.2 ghz 5.8 ghz 6.4 ghz 7.2 ghz -40 -30 -20 -10 -6 -4 -2 0 2 4 6 m ag n i t u d e ( d b ) frequency (mhz) 0 10 20 30 40 50 m ag n i t u d e ( d b ) CMPA5585025F x-band spectral mask at 15 w pae = 25.6 % @ 7.9 ghz & 25.3 % @ 8.4 ghz 7.9 ghz 8.4 ghz -40 -30 -20 -10 -6 -4 -2 0 2 4 6 m ag n i t u d e ( d b ) frequency (mhz) CMPA5585025F rev 4.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
6 typical performance of the CMPA5585025F figure 5. CMPA5585025F c-band linearity, gain, and pae vs average output power v ds = 28 v, i ds = 285 ma, oqpsk, 1.6 msps figure 6. CMPA5585025F x-band linearity, gain, and pae vs average output power v ds = 28 v, i ds = 285 ma, oqpsk, 1.6 msps 0 5 10 15 20 25 30 35 40 -50 -45 -40 -35 -30 -25 -20 -15 -10 20 25 30 35 40 45 gai n ( d b ) & po w er a d d ed ef f i ci en cy ( % ) 1. 6 m h z o f f set f r o m cen t er f r eq u en cy ( d b c) average output power (dbm) CMPA5585025F x-band linearity, gain, and pae vs average output power vdd = 28 v, idq = 285 ma, oqpsk, 1.6 msps 7.9 ghz offset - 7.9 ghz offset + 8.4 ghz offset - 8.4 ghz offset + 7.9 ghz gain 7.9 ghz pae 8.4 ghz gain 8.4 ghz pae 0 5 10 15 20 25 30 35 40 -50 -45 -40 -35 -30 -25 -20 -15 -10 29 31 33 35 37 39 41 43 45 gai n ( d b ) & po w er a d d ed ef f i ci en cy ( % ) 1. 6 m h z o f f set f r o m cen t er f r eq u en cy ( d b c) average output power (dbm) CMPA5585025F c-band linearity, gain, and pae vs average output power vdd = 28 v, idq = 285 ma, oqpsk, 1.6 msps 5.8 ghz offset - 5.8 ghz offset + 6.4 ghz offset - 6.4 ghz offset + 7.2 ghz offset - 7.2 ghz offset + 5.8 ghz gain 5.8 ghz pae 6.4 ghz gain 6.4 ghz pae 7.2 ghz gain 7.2 ghz pae CMPA5585025F rev 4.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
7 typical performance of the CMPA5585025F figure 7. CMPA5585025F evm vs average output power v ds = 28 v, i ds = 285 ma, 1.6 msps oqpsk modulation figure 8. CMPA5585025F - linearity vs average output power oqpsk, 1.6 msps, i ds = 285 ma figure 9. CMPA5585025F linearity vs average output power v ds = 28 v, i ds = 285 ma, im3 5 mhz spacing -50 -45 -40 -35 -30 -25 -20 -15 -10 20 22 24 26 28 30 32 34 36 38 40 42 44 46 l i n ear i t y ( d b c) average output power (dbm) CMPA5585025F linearity vs average output power vdd = 28 v, idq = 285 ma, im3 5 mhz spacing 5.8 ghz 6.4 ghz 7.2 ghz 7.9 ghz 8.4 ghz -50 -45 -40 -35 -30 -25 -20 -15 -10 20 22 24 26 28 30 32 34 36 38 40 42 44 46 1. 6 m h z o f f set f r o m cen t er f r eq u en cy y ( d b c) average output power (dbm) CMPA5585025F - linearity vs output power oqpsk, 1.6 msps, idq = 285 ma 5.8 ghz 6.4 ghz 7.2 ghz 7.9 ghz 8.4 ghz 0 1 2 3 4 5 6 7 8 9 10 21 23 25 27 29 31 33 35 37 39 41 43 45 evm ( % ) average output power (dbm) CMPA5585025F evm vs output power vdd = 28 v, idq = 285 ma, 1.6 msps oqpsk modulation 5.8 ghz 6.4 ghz 7.2 ghz 7.9 ghz 8.4 ghz CMPA5585025F rev 4.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
8 typical performance of the CMPA5585025F figure 10. CMPA5585025F - c-band output power, gain and pae vs input power v ds = 28 v, i ds = 1.2 a, cw figure 11. CMPA5585025F - x-band output power, gain and pae vs input power v ds = 28 v, i ds = 1.2 a, cw figure 12. CMPA5585025F - power, gain and pae vs frequency v ds = 28 v, i ds = 1.2 a, cw 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 gai n ( d b ) & p a e ( % ) input power (dbm) CMPA5585025F c-band output power, gain and pae vs input power vdd = 28 v, idq = 1.2 a, cw 5.8 ghz gain 5.8 ghz pae 6.4 ghz gain 6.4 ghz pae 7.2 ghz gain 7.2 ghz pae 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 gai n ( d b ) & p a e ( % ) input power (dbm) CMPA5585025F x-band output power, gain and pae vs input power vdd = 28 v, idq = 1.2 a, cw 7.9 ghz gain 7.9 ghz pae 8.4 ghz gain 8.4 ghz pae 0 5 10 15 20 25 30 35 40 45 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 sat u r ated ou t p u t po w er ( w ) frequency (ghz) CMPA5585025F psat vs frequency vdd = 28 v, idq = 1.2 a, cw psat gain pae CMPA5585025F rev 4.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
9 typical performance of the CMPA5585025F figure 13. CMPA5585025F - typical drain current vs average output power v ds = 28 v, i ds = 285 ma, oqpsk, 1.6 msps figure 14. CMPA5585025F - intermodulation distortion products vs tone spacing v ds = 28 v, i ds = 285 ma, center freq = 7.9 ghz note: divergence in im5 and im7 at tone spacings greater than 20 mhz is due to the bias components on the test fxture. 1.5 2.0 2.5 3.0 3.5 d r a i n c u r r e n t (a ) CMPA5585025F typical drain current vs average output power vdd = 28 v, idq = 285 ma, oqpsk, 1.6 msps 5.8 ghz 6.4 ghz 7.2 ghz 7.9 ghz 8.4 ghz 0.0 0.5 1.0 1.5 20 25 30 35 40 45 d r a i n c u r r e n t (a ) average output power (dbm) -30 -25 -20 -15 -10 in t er m o d u lat io n dist o r t io n ( d bc) CMPA5585025F intermodulation distortion products vs tone spacing vd = 28 v, idq = 285 ma, center freq = 7.9 ghz im3- im5- im7- im3+ im5+ im7+ -50 -45 -40 -35 0.1 1 10 100 in t er m o d u lat io n dist o r t io n ( d bc) two-tone spacing (mhz) CMPA5585025F rev 4.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
10 typical performance of the CMPA5585025F figure 15. CMPA5585025F - am-am v ds = 28 v, i ds = 285 ma figure 16. CMPA5585025F -normalized am-pm v ds = 28 v, i ds = 285 ma 18 20 22 24 26 s21 m ag n i t u d e ( d b ) CMPA5585025F am-am vdd = 28 v, idq = 285 ma 5.8 ghz 7.2 ghz 7.9 ghz 8.4 ghz 10 12 14 16 10 12 14 16 18 20 22 24 26 28 30 32 34 s21 m ag n i t u d e ( d b ) input power (dbm) 10 15 20 25 s 21 p h ase ( d eg r ees) CMPA5585025F normalized am-pm vdd = 28 v, idq = 285 ma 5.8 ghz 7.2 ghz 7.9 ghz 8.4 ghz -10 -5 0 5 10 12 14 16 18 20 22 24 26 28 30 32 34 s 21 p h ase ( d eg r ees) input power (dbm) CMPA5585025F rev 4.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
11 typical performance of the CMPA5585025F figure 17. CMPA5585025F evm vs average output power v ds = 28 v, i ds = 285 ma, 256 qam figure 18. CMPA5585025F linearity vs average output power v ds = 28 v, i ds = 285 ma, im3, im5, im7, 5 mhz spacing 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 20 25 30 35 40 45 evm (% ) output power (dbm) 6.4 evm (%) 7.9 evm (%) 8.4 evm (%) 7.2 evm (%) -60 -50 -40 -30 -20 -10 0 20 25 30 35 40 45 l i n ear i t y ( d b c) output power (dbm) im3 7900 im5 7900 im7 7900 CMPA5585025F rev 4.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
12 CMPA5585025F power dissipation de-rating curve note 1. area exceeds maximum case operating temperature (see page 2). 40 50 60 70 80 90 po w e r d i s s i p a ti o n (w ) CMPA5585025F power dissipation de-rating curve 0 10 20 30 0 25 50 75 100 125 150 175 200 225 250 po w e r d i s s i p a ti o n (w ) maximum case temperature ( c) note 1 CMPA5585025F rev 4.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
13 CMPA5585025F-amp demonstration amplifer circuit bill of materials designator description qty c1, c3, c7, c8, c10, c13 cap, 1.0 uf, +/-10%, 1210, 100v, x7r 6 c2, c4, c5, c6, c9, c12 cap, 33000 pf, 0805, 100v, x7r 6 c11, c14 cap elect 3.3uf 80v fk smd 2 r1, r2 res 0.0 ohm 1/16w 0402 smd 2 j1,j2 conn, sma, panel mount jack, flange, 4-hole, blunt post, 20mil 2 j3 connector, header, rt>plz .1cen lk 9pos 1 - pcb, taconic, rf-35p-0200-cl1/cl1 1 q1 CMPA5585025F 1 CMPA5585025F-amp demonstration amplifer circuit CMPA5585025F rev 4.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
14 CMPA5585025F-amp demonstration amplifer circuit CMPA5585025F-amp demonstration amplifer circuit outline CMPA5585025F rev 4.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
15 CMPA5585025F-amp demonstration amplifer circuit to confgure the CMPA5585025F test fxture to enable independent v g1 / v g2 control of the device, a cut must be made to the microstrip line just above the r1 resistor as shown. pin 9 will then supply v g1 and pin 8 will supply v g2 . CMPA5585025F rev 4.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
16 product dimensions CMPA5585025F (package type 440208) pin number qty 1 gate bias for stage 2 2 gate bias for stage 2 3 rf in 4 gate bias for stage 1 5 gate bias for stage 1 6 drain bias 7 drain bias 8 rf out 9 drain bias 10 drain bias 11 source CMPA5585025F rev 4.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
17 part number system parameter value units lower frequency 5.5 ghz upper frequency 1 8.5 ghz power output 25 w package flange - table 1. note 1 : alpha characters used in frequency code indicate a value greater than 9.9 ghz. see table 2 for value. character code code value a 0 b 1 c 2 d 3 e 4 f 5 g 6 h 7 j 8 k 9 examples: 1a = 10.0 ghz 2h = 27.0 ghz table 2. package power output (w) upper frequency (ghz) lower frequency (ghz) cree mmic power amplifer product line CMPA5585025F CMPA5585025F rev 4.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
18 product ordering information order number description unit of measure image CMPA5585025F gan mmic each CMPA5585025F-tb test board without gan mmic each CMPA5585025F-amp test board with gan mmic installed each CMPA5585025F rev 4.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
19 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for its use or for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications, and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. cree and the cree logo are registered trademarks of cree, inc. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/rf sarah miller marketing cree, rf components 1.919.407.5302 ryan baker marketing & sales cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.407.5639 CMPA5585025F rev 4.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2011-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.

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